Patent Number: 7,786,006

Title: Interconnect structures with a metal nitride diffusion barrier containing ruthenium and method of forming

Abstract: A method for forming an interconnect structure for copper metallization and an interconnect structure containing a metal nitride diffusion barrier are described. The method includes providing a substrate having a micro-feature opening formed within a dielectric material and forming a metal nitride diffusion barrier containing ruthenium, nitrogen, and a nitride-forming metal over the surfaces of the micro-feature. The nitride-forming metal is selected from Groups IVB, VB, VIB, and VIIB of the Periodic Table, and the metal nitride diffusion barrier is formed by exposing the substrate to a precursor of the nitride-forming metal, a nitrogen precursor, and a ruthenium precursor.

Inventors: Suzuki; Kenji (Guilderland, NY)

Assignee: Tokyo Electron Limited

International Classification: H01L 21/4763 (20060101)

Expiration Date: 8/31/12018