Patent Number: 7,786,469

Title: Thermal sensor with a silicon/germanium superlattice structure

Abstract: A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first substrate is bonded to the second substrate, forming a bonded substrate. An electrical connection is formed between the SiGe superlattice structure and the CMOS device, and a cavity is formed between the SiGe superlattice structure and the bonded substrate.

Inventors: Maa; Jer-Shen (Vancouver, WA), Tang; Jinke (New Orleans, LA), Lee; Jong-Jan (Camas, WA), Tweet; Douglas J. (Camas, WA), Hsu; Sheng Teng (Camas, WA)

Assignee: Sharp Laboratories of America, Inc.

International Classification: H01L 31/00 (20060101)

Expiration Date: 8/31/12018