Patent Number: 7,786,485

Title: Thin-film transistor and display device

Abstract: A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers.

Inventors: Dairiki; Koji (Kanagawa, JP), Miyairi; Hidekazu (Kanagawa, JP), Kurokawa; Yoshiyuki (Kanagawa, JP), Yamazaki; Shunpei (Tokyo, JP), Godo; Hiromichi (Kanagawa, JP), Kawae; Daisuke (Kanagawa, JP), Kobayashi; Satoshi (Kanagawa, JP)

Assignee: Semicondutor Energy Laboratory Co., Ltd.

International Classification: H01L 27/14 (20060101); H01L 29/04 (20060101); H01L 29/15 (20060101)

Expiration Date: 8/31/12018