Patent Number: 7,786,547

Title: Formation of active area using semiconductor growth process without STI integration

Abstract: A semiconductor device can be formed without use of an STI process. An insulating layer is formed over a semiconductor body. Portions of the insulating layer are removed to expose the semiconductor body, e.g., to expose bare silicon. A semiconductor material, e.g., silicon, is grown over the exposed semiconductor body. A device, such as a transistor, can then be formed in the grown semiconductor material.

Inventors: Yan; Jiang (Fishkill, NY), Shum; Danny Pak-Chum (Poughkeepsie, NY)

Assignee: Infineon Technologies AG

International Classification: H01L 29/00 (20060101)

Expiration Date: 8/31/12018