Patent Number: 7,786,552

Title: Semiconductor device having hydrogen-containing layer

Abstract: A method for reducing leakage current in a semiconductor structure is disclosed. One or more dielectric layers are formed on a semiconductor substrate, on which at least one device is constructed. A hydrogen-containing layer is formed over the dielectric layers. A silicon nitride passivation layer covers the dielectric layers and the hydrogen-containing layer. The hydrogen atoms of the hydrogen-containing layer are introduced into the dielectric layers without being blocked by the silicon nitride layer, thereby reducing leakage current therein.

Inventors: Huang; Tsung-Hsun (Chungho, TW), Lin; Kuo-Yin (Jhubei, TW), Yu; Chung-Yi (Hsin-chu, TW), Wu; Chih-Ta (Hsinchu, TW), Tsai; Chia-Shiung (Hsin-Chu, TW)

Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.

International Classification: H01L 23/58 (20060101)

Expiration Date: 8/31/12018