Patent Number: 7,787,977

Title: Methods and systems for forming semiconductor structures

Abstract: A method for processing substrates to manufacture semiconductor structures thereon includes analyzing at least one first processing parameter of a first apparatus for processing a substrate, thereby yielding at least one first throughput rate of the first apparatus. At least one second processing parameter of a second apparatus is analyzed for processing the substrate, thereby yielding at least one second throughput rate of the second apparatus. The first throughput rate and the second throughput rate are compared, thereby yielding at least one comparison result for processing the substrate.

Inventors: Lin; Chien-Hsun (Hsinchu, TW), Yang; An-Kuo (Hsinchu, TW), Guo; Yao-Wen (Chaozhou Town, TW), Lin; Chun-Hung (Taoyuan, TW)

Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.

International Classification: G06F 19/00 (20060101)

Expiration Date: 8/31/12018