Patent Number: 7,820,242

Title: Low-K interlevel dielectric materials and method of forming low-K interlevel dielectric layers and structures

Abstract: A composition of matter and a structure fabricated using the composition. The composition comprising: a resin; polymeric nano-particles dispersed in the resin, each of the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscible with the resin; and a solvent, the solvent volatile at a first temperature, the resin cross-linkable at a second temperature, the polymeric nano-particle decomposable at a third temperature, the third temperature higher than the second temperature, the second temperature higher than the first temperature, wherein a thickness of a layer of the composition shrinks by less than about 3.5% between heating the layer from the second temperature to the third temperature.

Inventors: Dubois; Geraud Jean-Michel (Los Gatos, CA), Hedrick; James Lupton (Pleasanton, CA), Kim; Ho-Cheol (San Jose, CA), Lee; Victor Yee-Way (San Jose, CA), Magbitang; Teddie Peregrino (San Jose, CA), Miller; Robert Dennis (San Jose, CA), Sankarapandian; Muthumanickam (Yorktown Heights, NY), Sundberg; Linda Karin (Los Gatos, CA), Volksen; Willi (San Jose, CA)

Assignee: International Business Machines Corporation

International Classification: B05D 3/02 (20060101)

Expiration Date: 2018-10-26 0:00:00