Patent Number: 7,820,365

Title: Method to fabricate a tilted logpile photonic crystal

Abstract: A method to fabricate a tilted logpile photonic crystal requires only two lithographic exposures and does not require mask repositioning between exposures. The mask and photoresist-coated substrate are spaced a fixed and constant distance apart using a spacer and the stack is clamped together. The stack is then tilted at a crystallographic symmetry angle (e.g., 45 degrees) relative to the X-ray beam and rotated about the surface normal until the mask is aligned with the X-ray beam. The stack is then rotated in plane by a small stitching angle and exposed to the X-ray beam to pattern the first half of the structure. The stack is then rotated by 180.degree. about the normal and a second exposure patterns the remaining half of the structure. The method can use commercially available DXRL scanner technology and LIGA processes to fabricate large-area, high-quality tilted logpile photonic crystals.

Inventors: Williams; John D. (Albuquerque, NM), Sweatt; William C. (Albuquerque, NM)

Assignee: Sandia Corporation

International Classification: G03F 7/26 (20060101)

Expiration Date: 2018-10-26 0:00:00