Patent Number: 7,820,474

Title: Metal catalyzed selective deposition of materials including germanium and antimony

Abstract: A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.

Inventors: Guha; Supratik (Chappaqua, NY), Mc Feely; Fenton R. (Ossining, NY), Yurkas; John J. (Stamford, CT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/00 (20060101)

Expiration Date: 2018-10-26 0:00:00