Patent Number: 7,820,476

Title: Method for manufacturing a semiconductor device

Abstract: A method for manufacturing a semiconductor device includes: forming a first region and a second region at a main surface of a semiconductor substrate; forming a gate insulating film containing Hf or Zr and oxygen on the first region and the second region; forming a first metallic film on the gate insulating film; forming a second metallic film on the first metallic film; removing a portion of the second metallic film; forming a third metallic film on the second metallic film and a portion of the first metallic film exposed by removing the portion of the second metallic film; and thermally treating so that constituent elements of the second metallic film is diffused into the gate insulating film via the first metallic film.

Inventors: Nakajima; Kazuaki (Tokyo, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/78 (20060101)

Expiration Date: 2018-10-26 0:00:00