Patent Number: 7,820,495

Title: Method for manufacturing semiconductor device

Abstract: An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.

Inventors: Dairiki; Koji (Isehara, JP), Kusumoto; Naoto (Isehara, JP), Tsurume; Takuya (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/00 (20060101); H01L 21/30 (20060101)

Expiration Date: 2018-10-26 0:00:00