Patent Number: 7,820,501

Title: Decoder for a stationary switch machine

Abstract: Accordingly, in one embodiment of the invention, a method is provided for reducing stacking faults in an epitaxial semiconductor layer. In accordance with such method, a substrate is provided which includes a first single-crystal semiconductor region including a first semiconductor material, the first semiconductor region having a <110> crystal orientation. An epitaxial layer including the first semiconductor material is grown on the first semiconductor region, the epitaxial layer having the <110> crystal orientation. The substrate is then annealed with the epitaxial layer at a temperature greater than 1100 degrees Celsius in an ambient including hydrogen, whereby the step of annealing reduces stacking faults in the epitaxial layer.

Inventors: Wang; Yun-Yu (Poughquag, NY), Sheraw; Christopher D. (Poughkeepsie, NY), Domenicucci; Anthony G. (New Paltz, NY), Black; Linda (Wappingers Falls, NY), Holt; Judson R. (Wappingers Falls, NY), Fried; David M. (Brewster, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/336 (20060101)

Expiration Date: 2018-10-26 0:00:00