Patent Number: 7,820,508

Title: Semiconductor device having capacitor and method of fabricating the same

Abstract: A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.

Inventors: Oh; Jung-Min (Incheon-Gwangyeoksi, KR), Han; Jeong-Nam (Seoul, KR), Hong; Chang-Ki (Seongnam-si, KR), Shim; Woo-Gwan (Yongin-si, KR), Park; Im-Soo (Seoul, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 21/8242 (20060101)

Expiration Date: 2018-10-26 0:00:00