Patent Number: 7,820,541

Title: Process for forming low defect density heterojunctions

Abstract: A method for forming a low defect density heterojunction between a first and a second compound, the first and second compounds each includes a group III element combined with a group V element in the periodic table, the method includes the steps of introducing in the deposition chamber the flux of the group III element for the first compound at substantially the same time while introducing in the deposition chamber a flux of the group V element for the second compound, stopping the flux of the group III element for the first compound after a first predetermined time period, stopping the flux of the group V element for the first compound after a second predetermined time period, and introducing in the deposition chamber a flux of the group III element the group V element for the second compound.

Inventors: Sullivan; Gerard J. (Newbury Park, CA), Ikhlassi; Amal (Thousand Oaks, CA), Bergman; Joshua I. (Thousand Oaks, CA), Brar; Berinder (Newbury Park, CA), Nagy; Gabor (Thousand Oaks, CA)

Assignee: Teledyne Licensing, LLC

International Classification: H01L 21/3205 (20060101)

Expiration Date: 2018-10-26 0:00:00