Patent Number: 7,820,550

Title: Negative tone double patterning method

Abstract: A method of forming a pattern on a wafer is provided. The method includes applying a photoresist on the wafer and exposing the wafer to define a first pattern on the photoresist. The method also includes exposing the wafer to define a second pattern on the photoresist, wherein each of the first and second patterns comprises unexposed portions of the photoresist and developing the wafer to form the first and second patterns on the photoresist, wherein the first and second patterns are formed by removing the unexposed portions of the photoresist.

Inventors: Nyhus; Paul (Portland, OR), Wallace; Charles (Portland, OR), Sivakumar; Swaminathan (Beaverton, OR)

Assignee: Intel Corporation

International Classification: H01L 21/311 (20060101)

Expiration Date: 2018-10-26 0:00:00