Patent Number: 7,820,553

Title: Prevention of trench photoresist scum

Abstract: Methods of preventing photoresist scum formation for etch processes for patterning material layers of semiconductor device material layers are disclosed. A treatment of N.sub.2 and O.sub.2 is used to prevent the formation of photoresist scum. The treatment may be performed in-situ, and may be performed during the etch process, after the etch process, or both. The treatment is particularly beneficial when implemented during the patterning of low dielectric constant material layers, and when used for the formation of isolated via patterns.

Inventors: Chu; Yin-Shen (Taichung, TW), Lee; Chia-Piao (Yongkang, TW)

Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.

International Classification: H01L 21/302 (20060101)

Expiration Date: 2018-10-26 0:00:00