Patent Number: 7,821,003

Title: Thin-film transistor substrate and display device having the same

Abstract: Provided are a thin-film transistor (TFT) substrate and a display device having the same. In the TFT substrate and the display device having the same, first and second drain electrodes of first and second TFTs connected to first and second pixel electrodes, respectively, are vertically bent a plurality of times. The distance between each of the first and second source electrodes and the first or second drain electrode is maintained at a minimum interline gap to increase the distance between a data line and each of the first and second drain electrodes and minimize the length of a region of each of the first and second drain electrodes adjacent to the data line. Consequently, a coupling capacitance between the data line and each of the first and second drain electrodes can be reduced, and each unit pixel region can have a uniform parasite capacitance within a predetermined range. In addition, the luminance deviation of a display device, which performs inversion driving, can be reduced.

Inventors: Na; Hye-Seok (Seoul, KR), Lee; Won-Hee (Seoul, KR), Kwon; Ho-Kyoon (Seoul, KR), Na; Byoung-Sun (Hwaseong-si, KR), Ahn; Soon-Il (Cheonan-si, KR), Kwon; Ji-Hyun (Asan-si, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 29/04 (20060101)

Expiration Date: 2018-10-26 0:00:00