Patent Number: 7,821,008

Title: Semiconductor device and manufacturing method thereof

Abstract: A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1.times.10.sup.19/cm.sup.3 to 1.times.10.sup.21/cm.sup.3 and belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5.times.10.sup.19/cm.sup.3 to 3.times.10.sup.21/cm.sup.3 and belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.

Inventors: Nakazawa; Misako (Tochigi, JP), Makita; Naoki (Nara, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 29/00 (20060101); H01L 21/322 (20060101)

Expiration Date: 2018-10-26 0:00:00