Patent Number: 7,821,013

Title: Silicon carbide semiconductor device

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

Inventors: Kumar; Rajesh (Nagoya, JP), Takeuchi; Yuichi (Obu, JP), Kataoka; Mitsuhiro (Nisshin, JP), Jeremy; Suhail Rashid (Cambridge, GB), Mihaila; Andrei (Cambridge, GB), Udrea; Florin (Cambridge, GB)

Assignee: DENSO CORPORATION

International Classification: H01L 29/12 (20060101); H01L 29/41 (20060101)

Expiration Date: 2018-10-26 0:00:00