Patent Number: 7,821,016

Title: Light activated silicon controlled switch

Abstract: The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.

Inventors: Krutsick; Thomas Joseph (Fleetwood, PA)

Assignee: Zarlink Semiconductor (U.S.) Inc.

International Classification: H01L 27/15 (20060101)

Expiration Date: 2018-10-26 0:00:00