Patent Number: 7,821,031

Title: Switch circuit, semiconductor device, and method of manufacturing said semiconductor device

Abstract: A switch circuit includes: a first FET that is connected to one of an input terminal and an output terminal, and performs ON/OFF operation under the control of a gate electrode connected to a control terminal; and a second FET that is connected between the first FET and the other one of the input terminal and the output terminal, and performs ON/OFF operation under the control of a gate electrode connected to the control terminal. The first FET has a higher gate backward breakdown voltage than that of the second FET. Alternatively, the first FET has lower OFF capacitance than that of the second FET.

Inventors: Matsuda; Hajime (Yamanashi, JP)

Assignee: Eudyna Devices Inc.

International Classification: H01L 29/739 (20060101)

Expiration Date: 2018-10-26 0:00:00