Patent Number: 7,821,033

Title: Semiconductor component comprising a drift zone and a drift control zone

Abstract: A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.

Inventors: Sedlmaier; Stefan (Munich, DE), Mauder; Anton (Kolbermoor, DE), Willmeroth; Armin (Augsburg, DE), Hirler; Franz (Isen, DE)

Assignee: Infineon Technologies Austria AG

International Classification: H01L 29/78 (20060101); H01L 21/336 (20060101)

Expiration Date: 2018-10-26 0:00:00