Patent Number: 7,821,049

Title: Semiconductor memory device and method for fabricating semiconductor memory device

Abstract: According to an aspect of the present invention, there is provided a semiconductor memory device comprising, a first transistor and a second transistor formed on a semiconductor substrate, a memory capacitor formed above the first transistor, the memory capacitor being connected to the first transistor, a dummy memory capacitor formed above the second transistor, a wiring layer formed above the memory capacitor and the dummy memory capacitor, the wiring layer being connected to the first transistor and the memory capacitor, a first plug connecting between the second transistor and the dummy memory capacitor, and a second plug connecting between the dummy memory capacitor and the wiring layer.

Inventors: Kanaya; Hiroyuki (Kanagawa-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 27/105 (20060101)

Expiration Date: 2018-10-26 0:00:00