Patent Number: 7,821,060

Title: Semiconductor device including trench gate transistor and method of forming the same

Abstract: A semiconductor device includes an active region having a groove, a gate insulating film, and a gate electrode. The gate electrode may include first and second layers. The first layer extends along the gate insulating film. The first layer is electrically conductive. The second layer extends along the first layer. The second layer is separate from the gate insulating film by the first layer.

Inventors: Kitamura; Yoshihiro (Tokyo, JP), Miyazaki; Toru (Tokyo, JP)

Assignee: Elpida Memory, Inc.

International Classification: H01L 29/76 (20060101)

Expiration Date: 2018-10-26 0:00:00