Patent Number: 7,821,086

Title: Semiconductor memory device

Abstract: A semiconductor memory device includes a first write line which is provided in a first direction, a first memory element which is connected to the first write line, a second memory element which is provided to neighbor the first memory element in the first direction, and is connected to the first write line, a first insulation film which is provided on surfaces of the first and second memory elements, and a second insulation film which is provided between the neighboring first and second memory elements and has a lower heat conductivity than the first insulation film.

Inventors: Kajiyama; Takeshi (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/82 (20060101)

Expiration Date: 2018-10-26 0:00:00