Patent Number: 7,821,093

Title: Solid-state imaging device with biased light shielding film

Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Inventors: Kitano; Yoshiaki (Kanagawa, JP), Abe; Hideshi (Kanagawa, JP), Kuroiwa; Jun (Kanagawa, JP), Hirata; Kiyoshi (Kanagawa, JP), Ohki; Hiroaki (Kanagawa, JP), Karasawa; Nobuhiro (Kanagawa, JP), Takizawa; Ritsuo (Tokyo, JP), Yamashita; Mitsuru (Kanagawa, JP), Sato; Mitsuru (Kanagawa, JP), Kokubun; Katsunori (Kanagawa, JP)

Assignee: Sony Corporation

International Classification: H01L 31/062 (20060101); H01L 31/0232 (20060101); H01L 31/06 (20060101); H01L 31/00 (20060101); H01L 31/113 (20060101); H01L 31/0203 (20060101); H01L 31/107 (20060101)

Expiration Date: 2018-10-26 0:00:00