Patent Number: 7,821,094

Title: Light emitting diode structure

Abstract: A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating the silicon substrate. The conductive layer fills up the through-holes and protrudes out from the through-holes. The light emitting diode is disposed on the top of the conductive layer protruding out from the through-holes and is located at the focus of the cup-structure.

Inventors: Lin; Hung-Yi (Tao-Yuan Hsien, TW), Chang; Hong-Da (Tai-Chung Hsien, TW)

Assignee: Touch Micro-System Technology Inc.

International Classification: H01L 21/00 (20060101)

Expiration Date: 2018-10-26 0:00:00