Patent Number: 7,821,121

Title: Semiconductor device and method for producing the same

Abstract: In a semiconductor device which has through holes in an end face, in which a semiconductor element is fixedly mounted on a face of a substrate which has a wiring pattern, which is conductive to the wiring portion formed in the through hole, in at least one face, in which electrodes of the semiconductor element are electrically connected to the wiring pattern, and in which the face of the substrate which has the semiconductor element is coated with a resin, the through hole has a through hole land with a width of 0.02 mm or more, which is conductive to the wiring portion, in a substrate face, and the wiring portion and the through hole land are exposed.

Inventors: Yoshizawa; Tetsuo (Atsugi, JP), Urakawa; Shin-ichi (Zama, JP), Miyake; Takashi (Ebina, JP)

Assignee: Canon Kabushiki Kaisha

International Classification: H01L 23/04 (20060101)

Expiration Date: 2018-10-26 0:00:00