Patent Number: 7,821,748

Title: Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory

Abstract: A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.

Inventors: Fukuzawa; Hideaki (Kawasaki, JP), Takashita; Masahiro (Yokohama, JP), Yuasa; Hiromi (Kawasaki, JP), Fuji; Yoshihiko (Kawasaki, JP), Iwasaki; Hitoshi (Yokosuka, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: G11B 5/39 (20060101)

Expiration Date: 2018-10-26 0:00:00