Patent Number: 7,821,809

Title: Nonvolatile memory device and method including resistor and transistor

Abstract: A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.

Inventors: Yoo; In-Kyeong (Suwon-si, KR), Lee; Myoung-Jae (Suwon-si, KR), Seo; Sun-Ae (Hwaseong-si, KR), Seo; David (Yongin-si, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: G11C 11/00 (20060101)

Expiration Date: 2018-10-26 0:00:00