Patent Number: 7,824,520

Title: Plasma treatment apparatus

Abstract: In the case of generating plasma under atmospheric pressure, the particle generated due to generation of high-density plasma is to be a cause of a defect such as a point defect or a line defect of a display portion in a display device. The present invention is offered in view of the above situation, and provides a plasma treatment apparatus for suppressing generation of a particle. According to the present invention, plasma is generated in a limited minimum region to be treated by a plasma treatment over a substrate to be treated. Generation of a particle is suppressed to a minimum by providing a plurality of plasma generation units generating minimum plasma having a similar size as the limited minimum region, changing a relative position of the plurality of plasma generation units and the substrate to be treated, and performing a plasma treatment to a limited predetermined region.

Inventors: Nakamura; Osamu (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: C23C 16/00 (20060101); B44C 1/22 (20060101); H05B 31/26 (20060101); H01L 21/306 (20060101); C03C 15/00 (20060101); C23F 1/00 (20060101)

Expiration Date: 2019-11-02 0:00:00