Patent Number: 7,824,561

Title: Method for manufacturing probe structure

Abstract: A method for manufacturing a probe structure is disclosed. In accordance with the method, two semiconductor substrates having different crystal directions are bonded and selectively etched utilizing an etch selectivity due to the different crystal directions to form a probe tip region and a probe beam region. A cantilever structure for a probe card is formed by filling the probe tip region and the probe beam region with a conductive material.

Inventors: Kim; Bong Hwan (Seoul, KR), Park; Bum Jin (Seoul, KR), Kim; Jong Bok (Goyang-si, KR), Lee; Chi Woo (Incheon, KR)

Assignee: Will Technology Co., Ltd.

International Classification: B44C 1/22 (20060101)

Expiration Date: 2019-11-02 0:00:00