Patent Number: 7,824,933

Title: Method of determining n-well scattering effects on FETs

Abstract: A process is provided for determining the effects of scattering from the edge of a resist during a doping process. Edges of a resist which has been patterned to create an n-well are simulated and individually stepped across a predetermined region in predetermined step sizes. The step sizes may vary from step to step after each step, the scattering effects due to the resist edge at its particular location is determined. A resist of virtually any shape may be divided into its component edges and each edge may be individually stepped during the process.

Inventors: Galland; Micah (Enosburg Falls, VT), Hook; Terence B. (Jericho, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/66 (20060101); G01R 31/26 (20060101)

Expiration Date: 2019-11-02 0:00:00