Patent Number: 7,824,942

Title: Method of fabricating photoelectric device of group III nitride semiconductor and structure thereof

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Inventors: Tu; Po Min (Chiayi County, TW), Huang; Shih Cheng (Hsinchu, TW), Lin; Wen Yu (Taichung County, TW), Hsu; Chih Peng (Tainan County, TW), Chan; Shih Hsiung (Hsinchu County, TW)

Assignee: Zhanjing Technology (Shen Zhen) Inc.

International Classification: H01L 21/00 (20060101)

Expiration Date: 2019-11-02 0:00:00