Patent Number: 7,824,951

Title: Method of fabricating an integrated circuit having a memory including a low-k dielectric material

Abstract: The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.

Inventors: Happ; Thomas (Pleasantville, NY), Zaidi; Shoaib (Poughkeepsie, NY)

Assignee: Qimonda AG

International Classification: H01L 21/00 (20060101)

Expiration Date: 2019-11-02 0:00:00