Patent Number: 7,824,972

Title: Producing a thin film transistor substrate by using a photoresist pattern having regions of different thicknesses

Abstract: A thin film transistor substrate that has reduced production cost and defect rate is presented. The thin film transistor substrate includes a gate wiring line formed on an insulating substrate and including a gate electrode, a data wiring line formed on the gate wiring line and including a source electrode and a drain electrode, a passivation layer pattern formed on parts of the data wiring line other than the drain electrode and a pixel region, and a pixel electrode electrically connected to the drain electrode. The pixel electrode includes zinc oxide.

Inventors: Choung; Jong-hyun (Hwaseong-si, KR), Lee; Byeong-jin (Yongin-si, KR), Park; Hong-sick (Suwon-si, KR), Hong; Sun-young (Yongin-si, KR), Kim; Bong-kyun (Incheon, KR), Shin; Won-suk (Yongin-si, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 21/00 (20060101); H01L 21/84 (20060101)

Expiration Date: 2019-11-02 0:00:00