Patent Number: 7,824,998

Title: Method of forming a semiconductor capacitor using amorphous carbon

Abstract: A method includes forming an amorphous carbon layer over a first dielectric layer formed over a substrate, forming a second dielectric layer over the amorphous carbon layer; and forming an opening within the amorphous carbon layer and second dielectric layer by a first etch process to partially expose a top surface of the first dielectric layer. A substantially conformal metal-containing layer is formed over the second dielectric layer and within the opening. The second dielectric layer and a portion of the metal-containing layer are removed. The amorphous carbon layer is removed by an oxygen-containing plasma process to expose a top surface of the first dielectric layer. An insulating layer is formed over the metal-containing layer, and a second metal-containing layer is formed over the insulating layer to form a capacitor.

Inventors: Liu; Yuan-Hung (Hsin-Chu, TW), Liu; Ming Chyi (Hsinchu, TW), Tu; Yeur-Luen (Taichung, TW), Lo; Chi-Hsin (Zhubei, TW), Tsai; Chia-Shiung (Hsin-Chu, TW)

Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.

International Classification: H01L 21/20 (20060101)

Expiration Date: 2019-11-02 0:00:00