Patent Number: 7,825,001

Title: Electronic device, method for manufacturing the same, and silicon substrate for electronic device

Abstract: An electronic device is formed by epitaxially growing a Si substrate on a Si layer of an SOI substrate in which the Si layer is deposited on a front surface of a substrate with an insulating layer interposed therebetween; forming an element on a front-surface side of the Si substrate; and forming a back-surface element aligned with respect to the element, on a back-surface side of the Si substrate after the substrate is etched. A mark is formed by etching and removing the Si layer and the insulating layer in a predetermined position of the SOI substrate. The element is formed using a concave part as a reference position. The concave part appears on the front surface of the Si substrate epitaxially grown on the mark. The back-surface element is formed using the mark as a reference position. The mark appears after the substrate is etched.

Inventors: Uya; Shinji (Miyagi, JP)

Assignee: Fujifilm Corporation

International Classification: H01L 21/76 (20060101)

Expiration Date: 2019-11-02 0:00:00