Patent Number: 7,825,002

Title: Method of peeling thin film device and method of manufacturing semiconductor device using peeled thin film device

Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

Inventors: Takayama; Toru (Kanagawa, JP), Maruyama; Junya (Kanagawa, JP), Yamazaki; Shunpei (Tokyo, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/762 (20060101)

Expiration Date: 2019-11-02 0:00:00