Patent Number: 7,825,007

Title: Method of joining a plurality of SOI substrates on a glass substrate by a heat treatment

Abstract: After the plurality of single-crystal semiconductor layers are provided adjacent to each other with a certain distance over a glass substrate which is a support substrate, heat treatment is performed on the glass substrate. The support substrate shrinks by this heat treatment, and the adjacent single-crystal semiconductor layers are in contact with each other due to the shrink. Energy beam irradiation is performed with the plurality of single-crystal semiconductor layers being in contact with each other, the plurality of single-crystal semiconductor layers are integrated, and thus a continuous single-crystal semiconductor layer is formed.

Inventors: Yamazaki; Shunpei (Setagaya, JP), Arai; Yasuyuki (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/30 (20060101); H01L 21/301 (20060101); H01L 21/304 (20060101); H01L 21/46 (20060101)

Expiration Date: 2019-11-02 0:00:00