Patent Number: 7,825,013

Title: Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit

Abstract: An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the amorphous portion. According to another embodiment, an integrated circuit comprises a doped semiconductor portion including a region having a non-stoichiometric composition and a contact structure comprising a conductive material. The contact structure is in contact with the region having a non-stoichiometric composition.

Inventors: Goldbach; Matthias (Dresden, DE), Henke; Dietmar (Radebeul, DE), Schmidbauer; Sven (Dresden, DE)

Assignee: Qimonda AG

International Classification: H01L 21/20 (20060101); H01L 29/04 (20060101); H01L 31/20 (20060101)

Expiration Date: 2019-11-02 0:00:00