Patent Number: 7,825,024

Title: Method of forming through-silicon vias

Abstract: A method of forming a semiconductor device having a through-silicon via (TSV) is provided. A semiconductor device is provided having a first dielectric layer formed thereon. One or more dielectric layers are formed over the first dielectric layer, such that each of the dielectric layers have a stacking structure, wherein the stacking structures in the one or more dielectric layers are vertically aligned. The stacking structures may be, for example, metal rings. The stacking structures are then removed to form a first recess. A second recess is formed by extending the first recess into the substrate. The second recess is filled with a conductive material to form the TSV.

Inventors: Lin; Chuan-Yi (Hsin-Chu, TW), Lee; Song-Bor (Zhubei, TW), Huang; Ching-Kun (Chubei, TW), Lin; Sheng-Yuan (Hsin-Chu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.

International Classification: H01L 21/4763 (20060101)

Expiration Date: 2019-11-02 0:00:00