Patent Number: 7,825,031

Title: Method of fabricating a semiconductor device

Abstract: The invention relates to a method of fabricating an integrated circuit, including the steps of providing at least one layer; performing a first implantation step, wherein particles are implanted into the layer under a first direction of incidence; performing a second implantation step, wherein particles are implanted into the layer under a second direction of incidence which is different from the first direction of incidence; performing a removal step, wherein the layer is partially removed depending on the local implant dose generated by the first and the second implantation step.

Inventors: Manger; Dirk (Dresden, DE), Weis; Rolf (Dresden, DE), Noelscher; Christoph (Nuremberg, DE)

Assignee: Qimonda AG

International Classification: H01L 21/302 (20060101)

Expiration Date: 2019-11-02 0:00:00