Patent Number: 7,825,397

Title: Short bridge phase change memory cells

Abstract: Random access memory cells having a short phase change bridge structure and methods of making the bridge structure via shadow deposition. The short bridge structure reduces the heating efficiency needed to switch the logic state of the memory cell. In one particular embodiment, the memory cell has a first electrode and a second electrode with a gap therebetween. The first electrode has an end at least partially non-orthogonal to the substrate and the second electrode has an end at least partially non-orthogonal to the substrate. A phase change material bridge extends over at least a portion of the first electrode, over at least a portion of the second electrode, and within the gap. An insulative material encompasses at least a portion of the phase change material bridge.

Inventors: Xi; Haiwen (Prior Lake, MN), Xue; Song S. (Edina, MN)

Assignee: Seagate Technology LLC

International Classification: H01L 45/00 (20060101)

Expiration Date: 2019-11-02 0:00:00