Patent Number: 7,825,411

Title: Thin film transistor with improved junction region

Abstract: A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region. The method includes forming a semiconductor layer pattern. Forming the semiconductor layer pattern includes: forming and patterning a first capping layer on an amorphous silicon layer; forming a second capping layer on the first capping layer pattern; forming a metal catalyst layer on the second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. Therefore, it is possible to prevent that a trap is generated in the junction region, thereby obtaining improved and uniform characteristics of the device.

Inventors: Seo; Jin-Wook (Suwon-si, KR), Lee; Ki-Yong (Yongin-si, KR), Yang; Tae-Hoon (Seongnam-si, KR), Park; Byoung-Keon (Incheon-si, KR)

Assignee: Samsung Mobile Display Co., Ltd.

International Classification: H01L 31/00 (20060101)

Expiration Date: 2019-11-02 0:00:00