Patent Number: 7,825,418

Title: Light emitting diode of high quantum efficiency and system thereof

Abstract: A light emitting diode (LED) includes a transparent substrate, a first type cladding layer, an active layer, a second type cladding layer, and first and second electrodes. The first type cladding layer is disposed on the transparent substrate. The active layer and the second electrode are juxtaposed on the first type cladding layer. The second type cladding layer is disposed on the active layer. The second electrode is disposed on the second type cladding layer. The first and second type cladding layers are doped with nanoparticles.

Inventors: Chen; Ga-Lane (Santa Clara, CA)

Assignee: Hon Hai Precision Industry Co., Ltd.

International Classification: H01L 27/15 (20060101)

Expiration Date: 2019-11-02 0:00:00