Patent Number: 7,825,428

Title: GaN-based semiconductor light emitting device

Abstract: There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including Al.sub.xIn.sub.yGa.sub.1-x-yN, where 0<x<1, 0<y<1, and 0<x+y<1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of In.sub.xGa.sub.1-xN, where 0<x<0.2, and GaN; a well layer including In.sub.xGa.sub.1-xN, where 0<x<1; a third barrier layer including one of In.sub.xGa.sub.1-xN, where 0<x<0.2 and GaN; and a lattice mismatch relaxation layer including one of Al.sub.xIn.sub.yGa.sub.1-x-yN, where 0<x<1, 0<y<1, and 0<x+y<1, Al.sub.xGa.sub.1-xN, where 0<x<1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.

Inventors: Sakong; Tan (Gyunggi-do, KR), Sone; Cheol Soo (Gyunggi-do, KR), Paek; Ho Sun (Gyunggi-do, KR), Yoon; Suk Ho (Seoul, KR), Lee; Jeong Wook (Gyunggi-do, KR)

Assignee: Samsung LED Co., Ltd.

International Classification: H01L 33/32 (20100101)

Expiration Date: 2019-11-02 0:00:00