Patent Number: 7,825,437

Title: Unity beta ratio tri-gate transistor static random access memory (SRAM)

Abstract: In general, in one aspect, a method includes forming N-diffusion and P-diffusion fins in a semiconductor substrate. A P-diffusion gate layer is formed over the semiconductor substrate and removed from the N-diffusion fins. A pass-gate N-diffusion gate layer is formed over the semiconductor substrate and removed from the P-diffusion fins and pull-down N-diffusion fins. A pull-down N-diffusion layer is formed over the semiconductor substrate.

Inventors: Pillarisetty; Ravi (Portland, OR), Datta; Suman (Port Matilda, PA), Kavalieros; Jack (Portland, OR), Doyle; Brian S. (Portland, OR), Shah; Uday (Portland, OR)

Assignee: Intel Corporation

International Classification: H01L 27/118 (20060101)

Expiration Date: 2019-11-02 0:00:00