Patent Number: 7,825,479

Title: Electrical antifuse having a multi-thickness dielectric layer

Abstract: An electrical antifuse comprising a field effect transistor includes a gate dielectric having two gate dielectric portions. Upon application of electric field across the gate dielectric, the magnitude of the electrical field is locally enhanced at the boundary between the thick and thin gate dielectric portions due to the geometry, thereby allowing programming of the electrical antifuse at a lower supply voltage between the two electrodes, i.e., the body and the gate electrode of the transistor, across the gate dielectric.

Inventors: Booth, Jr.; Roger A. (Wappingers Falls, NY), Cheng; Kangguo (Guilderland, NY), Kothandaraman; Chandrasekharan (Hopewell Junction, NY), Pei; Chengwen (Danbury, CT), Todi; Ravi M. (Poughkeepsie, NY), Yu; Xiaojun (Beacon, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/76 (20060101); H01L 31/062 (20060101); H01L 29/94 (20060101); H01L 31/113 (20060101); H01L 31/119 (20060101)

Expiration Date: 2019-11-02 0:00:00