Patent Number: 7,825,569

Title: Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Inventors: Natori; Eiji (Chino, JP), Kijima; Takeshi (Matsumoto, JP), Furuyama; Koichi (Sayama, JP), Tasaki; Yuzo (Hachoiji, JP)

Assignee: Seiko Epson Corporation

International Classification: H01L 41/187 (20060101)

Expiration Date: 2019-11-02 0:00:00